Apr 17th 2009 IEEE EDS DLs @ UCR

--------------------------------------------------------------------------------------------------

 effects, and defect engineering and material characterization. He authored two books, “Radiation Effects in Advanced Semiconductor Materials and Devices” and “Fundamental and Technological Aspects of Extended Defects in Germanium”, and edited two books, “Low Temperature Electronics” and “Germanium-Based Technologies: From Materials to Devices”. He also authored and co-authored eight book chapters and more than 800 technical papers. He has been involved in organizing of numerous international conferences and edited more than 40 Proceedings Volumes. He is an associated Editor for the Journal of the Electrochemical Society. He was Visiting Professor at the Queens University in Belfast, Ireland, and the University of Calabria, Italy. Prof. Claeys is a Fellow of IEEE and of the Electrochemical Society. He is current President for IEEE Electron Devices Society and an IEEE Distinguished Lecture since 2000. He received the IEEE Third Millennium Medal and the Electronics Division Award of the Electrochemical Society. He was elected as Academician and Professor of the International Information Academy.

--------------------------------------------------------------------------------------------------------------------------

From Millibits to Terabits per Second and Beyond – 60+ Years of Innovation

ABSTRACT

The unfolding of the Information Age has led to a plethora of products and services enriching our lives and skyrocketing world economy. This advancement in telecommunications has been driven by both hardware and software. The circuit complexity, as portrayed by the number of transistors on the silicon chip, continues to double every 24 months as pointed out by Moore’s law. On the other hand, the communication bandwidth had doubled every 18 months. This meteoric increase in bandwidth has been made possible by three key developments over the last 60 years. The first of these was the demonstration of the point-contact bipolar transistor in 1947 by Bardeen, Brattain and Shockley which started the solid-state revolution. This was followed by the demonstration of the MOS Field-Effect-Transistor by Kahng and Atalla in 1960. The second key contributor to this bandwidth explosion was the development of Information Theory as enunciated by Claude Shannon in 1948. Once in place, this provided a firm theoretical underpinning to understand the trade-offs between signal-to-noise ratio, bandwidth and error-free transmission in the presence of noise. The third key development which ignited this fire was the invention of laser by Schawlow and Townes in 1958 with a working demonstration in 1960. Serious efforts to transform this understanding into high-performance lightwave systems started by the designing of integrated electronics using MOS technology around 1980. However, initial attempts at boosting receiver sensitivity and data-rates were seriously hampered by a lack of understanding of the noise performance of the MOS device. Author’s contributions in this area not only led to a deeper understanding of the noise behavior of MOS devices but also produced an order of magnitude improvement in their performance.  This set the stage for MOS to become the technology of choice for lightwave and now low-cost wireless terminal applications. The ubiquitous nature of cell phones is a testimony to these key developments in the early 80’s. In this talk, starting from smoke signals at millibits per second, we will trace these events from a historical perspective to see how these key technologies lead to the development of modern wireless and optical networks of terabit capacity with petabits looming in sight.

 BIOGRAPHY

Dr. Renuka P. Jindal received his Ph.D. degree in Electrical Engineering from University of Minnesota in 1981. Upon graduation, he joined Bell Laboratories at Murray Hill, New Jersey. His experience at Bell Labs bridged both technical and administrative roles. On the technical side he worked in all three areas of devices, circuits and systems. Highlights include fundamental studies of noise behavior of MOS devices that led to almost an order of magnitude reduction in device noise. He also demonstrated high-performance single-chip gigahertz-band RF integrated circuits for AT&T’s metrobus lightwave project. He researched the physics of carrier multiplication and invented techniques for ultra-low noise signal amplification and detection in terms of novel devices and circuits based upon a new principle of random multiplication and optoelectronic integration. On the administrative side, Dr Jindal developed and managed significant extramural funding from federal agencies and independent Lucent Technologies business units. He was solely responsible for developing and deploying a corporate-wide manufacturing test strategy in relation to contract manufacturing for Lucent Technologies. In 2002, Dr. Jindal joined University of Louisiana, at Lafayette, as William and Mary Hansen Hall Board of Regents Eminent Scholar Endowed Chair. Dr. Jindal was Editor-in-Chief for IEEE Transactions on Electron Devices. He received the Distinguished Technical Staff Award from Bell Labs (1089) and the IEEE 3^rd Millennium Medal (2000). He is IEEE Fellow and the President-Elect for IEEE Electron Devices Society.

--------------------------------------------------------------------------------------------------------------------------

Advanced On-Chip ESD Protection Solutions in CMOS/BiCMOS Technologies

ABSTRACT

Electrostatic discharge (ESD) is a process in which a finite amount of charge is transferred from one object (i.e., human body) to the other (i.e., microchip). This process can result in a very high current passing through the microchip within a very short period of time, and more than 35% of chip damages can be attributed to such an event.  As such, designing robust on-chip ESD structures to protect microchips against the ESD stress is a high priority in the semiconductor industry. An overview on the ESD sources, models, protection schemes, and testing will first be given in this talk. This is followed by the examples of robust ESD solution designs for protecting various CMOS/BiCMOS integrated circuits for digital and analog applications.

BIOGRAPHY

Juin J. Liou received the B.S. (honors), M.S., and Ph.D. degrees in electrical engineering from the University of Florida, Gainesville, in 1982, 1983, and 1987, respectively. In 1987, he joined the Department of Electrical and Computer Engineering at the University of Central Florida, Orlando, Florida where he is now Analog Devices Professor. His current research interests are Micro/nanoelectronics computer-aided design, RF device modeling and simulation, and electrostatic discharge (ESD) protection design and simulation. Dr. Liou has published 8 books and more than 390 papers. His research has been sponsored by various agencies (NSF, DARPA, Navy, Air Force, NASA, NIST, etc.) for more than $9.0 Million. He is Editor for Microelectronics Reliability journal. He served as General Chair or TPC Chair for a large number of international conferences. Dr. Liou received ten different awards on excellence in teaching and research from the University of Central Florida (UCF) and six different awards from the IEEE Electron Device Society including IEEE Joseph M. Biedenbach Outstanding Engineering Educator Award in 2004. He is a Fellow of the Institute of Electronic Engineers (IEE), an IEEE Distinguished Lecturer and an National Science Council Distinguished Lecturer. He is Vice President for IEEE Electron Devices Society. He holds several honorary professorships, including Yangtze River Scholar Endowed Chair Professor – the highest honorary professorship in China, NSVL Distinguished Professor, Chang Gung Endowed Professor of Chang Gung University, Taiwan, Cao Guang-Biao Endowed Professor of Zhejiang University, China, Consultant Professor of Huazhong University of Science and Technology, Wuhan, China, and Courtesy Professor of Shanghai Jiao Tong University, Shanghai, China. Dr. Liou was a recipient of U.S. Air Force Fellowship Award and National University Singapore Fellowship Award.