2nd IEEE Electron Devices Society Mini-Colloquium on MicroElectronics & 2nd IEEE Student Research Symposium @ UCR (ISRS-UCR) (Flyer Downlowd)
The IEEE Electron Devices Society (EDS) Student Branch Chapter at UCR consists of both graduate and undergraduate students who have interests in electronics research. IEEE is “the world’s leading professional association for the advancement of technology” and IEEE Electron Devices Society has its field of interests covering all aspects of engineering, physics, theory, experiment and simulation of electron and ion devices involving insulators, metals, organic materials, plasmas, semiconductors, quantum-effect materials, vacuum, and emerging materials. Specific applications of these devices include bioelectronics, biomedical, computation, communications, displays, electro and micro mechanics, imaging, micro actuators, optical, photovoltaics, power, sensors, MEMS/NEMS, nano and signal processing.
PROGRAM
Time |
Events |
10:30 AM– 12:00 PM |
2nd IEEE EDS MQ on MicroElectronics |
|
|
12:00 PM– 1:00 PM |
2nd ISRS-UCR poster forum with Coffee Break at EBUII 2nd Floor Patio
|
12:30 PM– 1:00 PM |
Pizza Lunch & Best Paper Award Ceremony |
ISRS-UCR is student research conference organized by students to offer a regular interactive forum for students to share their research results. Student presentation will be in posters. Both graduate and undergraduate students are welcome to present their papers at ISRS-UCR, which will be judged by the committee of faculty and IEEE guests for Best Student Paper Awards. Papers will be included in the Proceedings in CD-ROM.
Award Category |
First Place |
Second Place |
Graduate |
One: $100 + Certificate |
One: $50 + Certificate |
Undergraduate |
One: $100 + Certificate |
One: $50 + Certificate |
ESD’s Middle Earth – Neither
Device nor System Testing
Dr. Nate Peachey received his PhD in Physical
Chemistry in 1994 from University of Nebraska–Lincoln and
then was awarded a Director’s Funded Postdoctoral Fellowship
at Los Alamos National Laboratory. In 1996, he joined Atmel
Corporation as process, technology development, device and
circuit design engineer. He joined RF Micro Devices in 2005
as an ESD Design Manager in charge of ESD protection for all
RFMD technologies including Si and GaAs; as well as RF
antenna ESD protection. He published about 20 technical
papers. In 2009, Dr. Peachney was elected to the
Board of Directors for the ESD Association. He is also
involved in other activities within ESDA. Currently he is
serving on the Technical and Administrative Support
Committee (TAS) and is the work group chair for the Human
Metal Model (HMM) work group 5.6. The culmination of this
work was the release of the ANSI/ESD SP5.6-2009 HMM Standard
Practice document late last year. Dr. Peachey is also one of
the coauthors of the Industry Council on ESD’s White Paper 3
that addresses system level ESD testing of devices and
components.
In 2009, Dr. Peachney was elected to the Board of
Directors for the ESD Association. He is also involved in
other activities within ESDA. Currently he is serving on the
Technical and Administrative Support Committee (TAS) and is
the work group chair for the Human Metal Model (HMM) work
group 5.6. The culmination of this work was the release of
the ANSI/ESD SP5.6-2009 HMM Standard Practice document late
last year. Dr. Peachey is also one of the coauthors of the
Industry Council on ESD’s White Paper 3 that addresses
system level ESD testing of devices and components.
The Importance of ESD in the Electronic Industryy
- From today’s microelectronics to future nano-structures- From today’s microelectronics to future nano-structures
Dr. Steven Voldman received his B.S. in Engineering Science from University of Buffalo (1979); a first M.S. EE (1981) from Massachusetts Institute of Technology (MIT); a second degree EE Degree (Engineer Degree) from MIT; a MS Engineering Physics (1986) and a PhD in electrical engineering (EE) (1991) from University of Vermont under IBM's Resident Study Fellow program. He was with IBM for 25 years working on semiconductor device physics, device design, and reliability, hot electrons, leakage mechanisms, latchup and ESD. He has worked on both technology and product development in Bipolar SRAM, CMOS DRAM, CMOS logic,
Silicon on Insulator (SOI), BiCMOS, Silicon Germanium (SiGe), RF CMOS, RF SOI, smart power, and image processing. In 2008, he joined Qimonda DRAM team working on 70/58/48nm In 2009, he joined Intersil Corporation. He was chairman of SEMATECH ESD Working Group. He is Chairman of the ESD Association Work Group on TLP and VF-TLP and a member of the ESD Association Board of Directors. He initiated the “ESD on Campus” program at ESDA. He has 190 US patents. He authored five books on ESD protection and latch-up. Dr. Voldman is IEEE Fellow for “Contributions in ESD protection in CMOS, Silicon on Insulator and Silicon Germanium Technology”.
LED Backlighting Solutions for Energy Efficient Displayy
Dr. Bin Zhao received the BSEE degree from Tsinghua University, China in 1985 and the PhD degree from California Institute of Technology in 1993. He has been with SEMATECH, Rockwell International, Conexant Systems, Skyworks Solutions, and Freescale Semiconductor. His past work and experience have been involved with both VLSI technology development and analog/mixed-signal/RF IC design. In 1997, he fabricated the industry first Cu/low-k (k<3) dual-damascene interconnect by developing a successful fabrication process for the Cu/SiOCH low-k dual-damascene interconnect which has been widely used in today’s high performance IC products. In his tenure with Conexant and Skyworks, he led and managed the design of analog
mixed-signal, power-management ICs and RF
transceiver ICs for GSM, GPRS, EDGE, and WCDMA cellular handsets.
Currently, he is the Director of Southern California Development
Center, Freescale Semiconductor, Irvine, CA, where he leads the IC
design and product development for consumer electronics and mobile
communications. He has authored and coauthored more than 200 journal
publications and conference presentations and holds more than 45
issued
Date: April 2nd, 2010
Time: 10:30AM-1:00PM
Place::2FL Patio EBUII2FL Patio EBUII2FL Patio EBUII
Contact: Mr. Jun Wang
junwang@engr.ucr.edujunwang@engr.ucr.edu
Paper Deadlines forPaper Deadlines for
2nddISRS-UCR:ISRS-UCR:
March 20th:: Abstract
March 30th:: posters
(For the Proceedings)
Organized by
IEEE Electron Device Society Student Branch Chapter at UCR
1st IEEE Student Microelectronics Research Forum @ UCR (ISMRF-UCR)
Date: Friday, April 17th, 2009
Time: 10:30AM - 1:00PM
Place: 232 Engineering Building Unit II, UCR
The IEEE Student Microelectronics Research Forum @ UCR (ISMRF-UCR) is a new annual student research interactive forum organized by the IEEE EDS UCR Student Chapter with its first event to be held jointly with the other two events on April 17, 2009. ISMRF-UCR aims to provide a regular and interactive forum for both graduate and undergraduate students at UCR to discuss and share their recent research ideas and results with their peers, hence to promote student research spirits in their earlier career. The 1st ISMRF-UCR calls for UCR students to submit their research papers to be presented at the interactive forum. These interactive papers will be judged by the IEEE distinguished guests and a group of UCR faculty members for the best student paper awards. Two best student paper awards are planned for both the graduate and undergraduate categories. The proceedings for ISMRF-UCR will be published in CD-ROM format and will be archived by the IEEE EDS UCR Student Chapter. The 1st ISMRF-UCR will also be joined by the two NSF US-China International Research Experiences for Students (IRES) programs currently directed by Prof. Albert Wang and Prof. Sheldon Tan of the Dept. of Electrical Engineering. About eight UCR undergraduate students are selected to participate in the 2009 NSF US-China IRES Program and will travel to China in the summer for eight weeks of academic exchanges.
Time |
Events |
10:30 AM– 10:40 AM |
IEEE EDS UCR Chapter Inauguration by the EDS President.
|
10:40 AM– 12:10 PM |
IEEE Electron Devices Society Mini-Colloquium on MicroElectronics
|
12:10 PM– 1:00 PM |
1st ISMRF-UCR poster forum with Coffee Break at EBUII 2nd Floor Patio
|
12:30 PM– 1:00 PM |
Pizza Lunch & Best Paper Award Ceremony |
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